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Molecular Dynamics Modeling of Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces

[+] Author Affiliations
Woon Ih Choi, Kwiseon Kim, Sreekant Narumanchi

National Renewable Energy Laboratory, Golden, CO

Paper No. IMECE2011-65409, pp. 397-404; 8 pages
  • ASME 2011 International Mechanical Engineering Congress and Exposition
  • Volume 10: Heat and Mass Transport Processes, Parts A and B
  • Denver, Colorado, USA, November 11–17, 2011
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-5496-9
  • Copyright © 2011 by ASME


Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This suggests that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5 nm disordered interface between Si/Al are in-line with recent experimental data in the literature.

Copyright © 2011 by ASME



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