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Measurement Methods of Pad Properties for Chemical Mechanical Polishing

[+] Author Affiliations
X. H. Zhang, Z. J. Pei

Kansas State University, Manhattan, KS

Graham R. Fisher

MEMC Electronic Materials, Inc., St. Peters, MO

Paper No. IMECE2007-44013, pp. 517-522; 6 pages
doi:10.1115/IMECE2007-44013
From:
  • ASME 2007 International Mechanical Engineering Congress and Exposition
  • Volume 3: Design and Manufacturing
  • Seattle, Washington, USA, November 11–15, 2007
  • Conference Sponsors: ASME
  • ISBN: 0-7918-4297-5 | eISBN: 0-7918-3812-9
  • Copyright © 2007 by ASME

abstract

Silicon wafers are the fundamental building blocks for most integrated circuits. Chemical mechanical polishing is used to manufacture silicon wafers as the final material removal process to meet the ever-increasing demand for flatter wafers and lower prices. The polishing pad is one of the critical factors in planarizing wafer surfaces and its properties play critical roles in polishing. However, pad properties change during the process. This paper reviews the measurement methods for thickness, hardness, and Young’s modulus of polishing pads.

Copyright © 2007 by ASME
Topics: Polishing

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