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Characterization of Titanium Nitride Films Prepared by DC Reactive Magnetron Sputtering at Different Deposition Time

[+] Author Affiliations
Kai Yang, Mingyuan Gu

Shanghai Jiaotong University, Shanghai, China

Jianqing Jiang

Southeast University, Nanjing, China

Paper No. IMECE2007-41559, pp. 281-286; 6 pages
doi:10.1115/IMECE2007-41559
From:
  • ASME 2007 International Mechanical Engineering Congress and Exposition
  • Volume 3: Design and Manufacturing
  • Seattle, Washington, USA, November 11–15, 2007
  • Conference Sponsors: ASME
  • ISBN: 0-7918-4297-5 | eISBN: 0-7918-3812-9
  • Copyright © 2007 by ASME

abstract

Titanium nitride (TiN) films were grown on Si (111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM). The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.

Copyright © 2007 by ASME

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