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Modeling for Mass Transfer and Thermal Stress of Silicon Carbide PVT Growth

[+] Author Affiliations
R.-H. Ma, H. Zhang, M. Dudley

State University of New York at Stony Brook, Stony Brook, NY

S. Ha, M. Skowronski

Carnegie Mellon University, Pittsburgh, PA

Paper No. IMECE2002-39391, pp. 187-195; 9 pages
doi:10.1115/IMECE2002-39391
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Volume 1
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-3632-0 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

The growth of SiC bulk crystal is studied using a physical model including chemical reactions, mass transfer and growth kinetics. The thermal stress distribution in an irregular shaped growing crystal is predicted using a two-dimensional anisotropic stress model. The growth and stress models are integrated into an existing global heat transport model to investigate variation of thermal field, growth rate and the shape of the as-grown crystal as well as the thermal stress distribution during a real time growth processes. The onset of dislocation is also correlated with thermal elastic stress qualitatively using the CRSS model. The simulated results are compared with experimental measurement. The effects of the growth system geometry are also discussed.

Copyright © 2002 by ASME

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