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Tension-Induced Raman Spectrum Enhanced Phenomena of Graphene Membrane

[+] Author Affiliations
Kai-Ming Hu, Bo Peng, Han Yan, Wen-Ming Zhang

Shanghai Jiao Tong University, Shanghai, China

Zhong-Yin Xue, Zeng-Feng Di

State Key Laboratory of Functional Materials for Informatics, Shanghai, China

Ya-Ting Sun

National Key Laboratory of Micro/Nano Fabrication Technology, Shanghai, China

Paper No. DETC2018-85158, pp. V004T08A016; 8 pages
  • ASME 2018 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
  • Volume 4: 23rd Design for Manufacturing and the Life Cycle Conference; 12th International Conference on Micro- and Nanosystems
  • Quebec City, Quebec, Canada, August 26–29, 2018
  • Conference Sponsors: Design Engineering Division, Computers and Information in Engineering Division
  • ISBN: 978-0-7918-5179-1
  • Copyright © 2018 by ASME


In the Letter, we reported the tension-induced Raman spectrum enhanced phenomena of graphene membrane. The standard micro-fabrication processes are utilized to fabricate micro-scale holes on Silicon-On-Insulator (SOI) wafers, and suspended graphene membranes are transferred onto target substrates with shallow holes and flat substrates using the dry and wet transfer techniques, respectively. The corrugated graphene near the hole is stretched smoothly due to the built-in strain during the transfer processes, and the intensity ratio between the 2D and G bands I2D/IG>5, which demonstrates the high quality of graphene sheet is obtained under the stretching stress. The intensity ratio between the 2D and G bands would diminish greatly when the graphene membrane is broken. Therefore, the Raman spectrum intensities of graphene membranes can be tuned by the built-in strain. The study can be helpful for further understanding the formation mechanism of corrugated graphene, the suppressing method of the small ripple in graphene, and the way to improve the quality of graphene.

Copyright © 2018 by ASME



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