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Modeling and Control of Surface Quality in Chemical Mechanical Planarization (CMP)

[+] Author Affiliations
Pavan Poosarla, Hamid Emadi, Abhijit Chandra, Sourabh Bhattacharya

Iowa State University, Ames, IA

Paper No. DSCC2017-5240, pp. V002T16A004; 10 pages
doi:10.1115/DSCC2017-5240
From:
  • ASME 2017 Dynamic Systems and Control Conference
  • Volume 2: Mechatronics; Estimation and Identification; Uncertain Systems and Robustness; Path Planning and Motion Control; Tracking Control Systems; Multi-Agent and Networked Systems; Manufacturing; Intelligent Transportation and Vehicles; Sensors and Actuators; Diagnostics and Detection; Unmanned, Ground and Surface Robotics; Motion and Vibration Control Applications
  • Tysons, Virginia, USA, October 11–13, 2017
  • Conference Sponsors: Dynamic Systems and Control Division
  • ISBN: 978-0-7918-5828-8
  • Copyright © 2017 by ASME

abstract

Obtaining uniform surface finish across large length scales is extremely important in Chemical Mechanical Planarization (CMP). Existing control strategies use results from model simulations to propose open-loop control strategies to reduce the step height on surfaces being polished. In the present work, we propose a strategy to control the surface profile of substrate during CMP process. The evolution of the surface profile is predicted using the state space model of the polishing process. The resulting state space equation is solved and a closed form solution of the surface profile is obtained as a function of time. Based on the solution, we provide a fundamental limitation for the machining process in terms of the extent of planarization that can be achieved for a given material budget.

Copyright © 2017 by ASME

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