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Electrostatically Tunable Nanomechanical Shallow Arches

[+] Author Affiliations
Syed N. R. Kazmi, Amal Z. Hajjaj, Pedro M. F. J. Costa, Mohammad I. Younis

King Abdullah University of Science and Technology, Thuwal, Saudi Arabia

Paper No. DETC2017-67845, pp. V004T09A011; 6 pages
doi:10.1115/DETC2017-67845
From:
  • ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
  • Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems
  • Cleveland, Ohio, USA, August 6–9, 2017
  • Conference Sponsors: Design Engineering Division, Computers and Information in Engineering Division
  • ISBN: 978-0-7918-5816-5
  • Copyright © 2017 by ASME

abstract

We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

Copyright © 2017 by ASME
Topics: Arches

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