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A MoS2 Field-Effect Transistor With a Liquid Back Gate

[+] Author Affiliations
Kabin Lin, Zhishan Yuan, Yu Yu, Kun Li, Haojie Yang, Pinyao He, Jian Ma, Jingjie Sha, Yunfei Chen

Southeast University, Nanjing, China

Paper No. IMECE2016-66544, pp. V010T13A041; 4 pages
doi:10.1115/IMECE2016-66544
From:
  • ASME 2016 International Mechanical Engineering Congress and Exposition
  • Volume 10: Micro- and Nano-Systems Engineering and Packaging
  • Phoenix, Arizona, USA, November 11–17, 2016
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-5064-0
  • Copyright © 2016 by ASME

abstract

The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.

Copyright © 2016 by ASME

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