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A Roadmap for Building Thermal Models for AlGaN/GaN HEMTs: Simplifications and Beyond

[+] Author Affiliations
Mohammad Azarifar, Nazli Donmezer

Middle East Technical University, Ankara, Turkey

Paper No. HT2016-7383, pp. V002T11A006; 7 pages
doi:10.1115/HT2016-7383
From:
  • ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels
  • Volume 2: Heat Transfer in Multiphase Systems; Gas Turbine Heat Transfer; Manufacturing and Materials Processing; Heat Transfer in Electronic Equipment; Heat and Mass Transfer in Biotechnology; Heat Transfer Under Extreme Conditions; Computational Heat Transfer; Heat Transfer Visualization Gallery; General Papers on Heat Transfer; Multiphase Flow and Heat Transfer; Transport Phenomena in Manufacturing and Materials Processing
  • Washington, DC, USA, July 10–14, 2016
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-5033-6
  • Copyright © 2016 by ASME

abstract

AlGaN/GaN based high electron mobility transistors (HEMTs) have been intensively used due to their high-efficiency power switching and large current handling capabilities. However, the high power densities and localized heating in these devices form small, high temperature regions called hotspots. Analysis of heat removal from hotspots and temperature control of the entire device is necessary for the reliable design of HEMT devices. For accurate analysis of heat transfer using thermal simulations in such devices with heat transfer occurring at different length scales, a roadmap is needed. For this purpose relative importance of different heat transfer modes in removing heat from devices with different substrate materials, operating at different power densities while different boundary conditions are analyzed using two and three-dimensional COMSOL Multiphysics simulations. Results give the relative importance of different parameters on the heat removal mechanism from devices and provide a roadmap for building simpler yet still accurate thermal models for AlGaN/GaN HEMTs and similar devices.

Copyright © 2016 by ASME
Topics: Gallium nitride

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