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Characterization of the Electronic Properties and Strain Sensitivity of Graphene Formed by C2H2 Chemical Vapor Deposition

[+] Author Affiliations
Meng Yang, Masato Ohnishi, Ken Suzuki, Hideo Miura

Tohoku University, Sendai, Japan

Paper No. IMECE2015-53313, pp. V010T13A036; 8 pages
doi:10.1115/IMECE2015-53313
From:
  • ASME 2015 International Mechanical Engineering Congress and Exposition
  • Volume 10: Micro- and Nano-Systems Engineering and Packaging
  • Houston, Texas, USA, November 13–19, 2015
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-5753-3
  • Copyright © 2015 by ASME

abstract

We succeed in synthesizing large-area single-layer graphene sheets with different grain size using C2H2 chemical vapor deposition process. Our graphene shows high uniformity and low sheet resistance to 1080Ω/□. By fabricating graphene-based field effect transistors (FETs), the relation between the nucleation density and the electronic properties of CVD grpahene are investigated. We found that the nucleation density can severely affect the defects formation in graphene, leading to the change in the electronic properties of graphene. We also check the strain sensitivity of CVD graphene. The as-grown graphene/Cu film was fixed onto the SiO2/Si substrate with a double-sided tape. The strain device is fabricated directly on the graphene-coated Cu foils by using the standard photolithography and reactive ion etching (RIE) process. Then the device is transferred onto a stretchable and flexible polydimethysiloxane (PDMS) substrate. By using a motorized stage, the tensile test is performed to investigate the piezoresistive properties of graphene-based strain sensors. The one-dimensional tensile test is performed to investigate the piezoresistive properties. A gauge factor 3.4 was achieved under the tensile deformation.

Copyright © 2015 by ASME

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