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Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling

[+] Author Affiliations
Karen M. Dowling, Ateeq J. Suria, Yoonjin Won, Ashwin Shankar, Hyoungsoon Lee, Mehdi Asheghi, Kenneth E. Goodson, Debbie G. Senesky

Stanford University, Stanford, CA

Paper No. IPACK2015-48409, pp. V003T07A006; 7 pages
  • ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels
  • Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays
  • San Francisco, California, USA, July 6–9, 2015
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 978-0-7918-5690-1
  • Copyright © 2015 by ASME


High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that SiC-based microchannels used for localized cooling should have high aspect ratio features (above 8:1) to obtain heat transfer coefficients (300 to 600 kW/m2·K) required to obtain gallium nitride (GaN) device channel temperatures below 100°C. This work presents experimental results of microfabricating high aspect ratio microchannels in a 4H-SiC substrate using inductively coupled plasma (ICP) etching. Depths of 90 μm and 80 μm were achieved with a 5:1 and 12:1 aspect ratio, respectively. This microfabrication process will enable the integration of microchannels (backside features) with high-power density devices such as GaN-on-SiC based electronics, as well as other SiC-based microfluidic applications.

Copyright © 2015 by ASME



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