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Two-Dimensional Monolayer MX2 (M=Mo, W; X=S, Se) Synthesis, Characterization and Device Applications

[+] Author Affiliations
Bin Xiang, Lei Yang, Jian Huang, Qi Fu

University of Science and Technology of China, Hefei, China

Paper No. IPACK2015-48286, pp. V003T07A001; 4 pages
doi:10.1115/IPACK2015-48286
From:
  • ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels
  • Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays
  • San Francisco, California, USA, July 6–9, 2015
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 978-0-7918-5690-1
  • Copyright © 2015 by ASME

abstract

Recently two-dimensional layered semiconductors with promising electronic and optical properties, have opened up a new way for applications in atomically thin electronics and optoelectronics. Here we demonstrate large area synthesis of monolayer MoS2 and WSe2 using a chemical vapor deposition method at ambient pressure. The atomic analysis of the as-grown monolayer was conducted by spherical-aberration-corrected high resolution scanning transmission electron microscopy and atomic force microscopy. Raman spectroscopy was utilized to identify the monolayer configuration of the as-grown samples. Strong photoluminescence peaks at a visible wavelength were observed at room temperature in the as-grown monolayer samples. The mobility and carrier concentrations were calculated in as-grown monolayer-based transistor devices. The emergency of these two dimensional materials provides grand possibilities for future semiconductor device applications.

Copyright © 2015 by ASME

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