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High Temperature Power Electronics for Gas Turbine Engine Applications FREE

[+] Author Affiliations
Richard R. Grzybowski, A. George Foyt

United Technologies Research Center, East Hartford, CT

Paper No. 96-GT-108, pp. V005T15A015; 6 pages
doi:10.1115/96-GT-108
From:
  • ASME 1996 International Gas Turbine and Aeroengine Congress and Exhibition
  • Volume 5: Manufacturing Materials and Metallurgy; Ceramics; Structures and Dynamics; Controls, Diagnostics and Instrumentation; Education; General
  • Birmingham, UK, June 10–13, 1996
  • Conference Sponsors: International Gas Turbine Institute
  • ISBN: 978-0-7918-7876-7
  • Copyright © 1996 by ASME

abstract

The drive power requirements for several representative actuator applications are discussed, and the possibilities of meeting those requirements with conventional silicon electronics, and also with higher temperature capability electronics are presented. For all the usual drive circuits, both normally-off power transistors and conventional diodes are essential. Silicon devices can meet these requirements, if the electronics can be maintained near room temperature. If not, then devices based on other materials systems, such as silicon carbide, are needed. Basic material properties suggest that these devices can be capable of controlling large power levels, much larger than for silicon. However, these devices are in the very early stage of development, and have been demonstrated at only low power levels. Finally, the development of efficient blue light emitting diodes in the gallium nitride materials system is discussed. This resulting investment in this system may enhance the development of higher power, high temperature nitride-based devices, offering an exciting alternate to silicon carbide.

Copyright © 1996 by ASME
This article is only available in the PDF format.

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