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Transient Behavior of the Gallium Nitride Chemical Vapor Deposition Process

[+] Author Affiliations
Jiandong Meng, Yogesh Jaluria

Rutgers, The State University of New Jersey, Piscataway, NJ

Paper No. IMECE2013-63236, pp. V08CT09A074; 8 pages
doi:10.1115/IMECE2013-63236
From:
  • ASME 2013 International Mechanical Engineering Congress and Exposition
  • Volume 8C: Heat Transfer and Thermal Engineering
  • San Diego, California, USA, November 15–21, 2013
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-5636-9
  • Copyright © 2013 by ASME

abstract

The transient behavior of the Gallium Nitride deposition process in a CVD reactor is numerically investigated. A two-dimensional impinging reactor is considered to examine the time-dependent transport in the MOCVD process, including the steady-state deposition process, and the system start-up and shut-down. The study involves the consideration of complicated transport phenomena, including fluid flow, heat and mass transfer, and chemical reactions between the reactants and the intermediate species. The temperature field and the deposition rate are studied as functions of time, as well as the precursor mass fraction at certain times. The results obtained provide an in-depth understanding about the entire MOCVD process, and the possibility to control the system operating time and the consumption of input power and precursors, which are generally quite expensive. It also provided inputs on the effects of changing operating conditions and the duration of starting and shut down effects.

Copyright © 2013 by ASME

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