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Modelling of Thermal Rectification in Si and Ge Thin Films

[+] Author Affiliations
E. Chávez-Ángel

Institut Català de Nanociència i Nanotecnologia (ICN2), Barcelona, SpainUniversitat Autònoma de Barcelona, Barcelona, Spain

C. M. Sotomayor Torres

Institut Català de Nanociència i Nanotecnologia (ICN2), Barcelona, SpainCatalan Institution for Research and Advanced Studies (ICREA), Barcelona, Spain

F. Alzina

Institut Català de Nanociència i Nanotecnologia (ICN2), Barcelona, Spain

Paper No. IMECE2013-63613, pp. V08CT09A013; 6 pages
  • ASME 2013 International Mechanical Engineering Congress and Exposition
  • Volume 8C: Heat Transfer and Thermal Engineering
  • San Diego, California, USA, November 15–21, 2013
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-5636-9
  • Copyright © 2013 by ASME


In the present work we have studied an extension of the classical thermal rectification, arising in certain cases from the contact of two dissimilar bulk materials with different temperature dependence of the thermal conductivity, to the Si-Ge system when boundary scattering effects are taken into account. Moreover, the directionality of the in-plane heat flow in a Si plate can be achieved by tuning the thickness and the impurity concentration along the cross section of the plate. We have designed several potential structures with this function in mind and discussed the physics behind.

Copyright © 2013 by ASME



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