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Fabrication of GaN Films in a Chemical Vapor Deposition Reactor

[+] Author Affiliations
J. Meng, Y. Jaluria, S. Wong

Rutgers, The State University of New Jersey, Piscataway, NJ

Paper No. MNHMT2013-22053, pp. V001T07A001; 11 pages
doi:10.1115/MNHMT2013-22053
From:
  • ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
  • ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
  • Hong Kong, China, December 11–14, 2013
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-3615-4
  • Copyright © 2013 by ASME

abstract

A three-dimensional numerical study has been carried out on the rotating disk GaN MOCVD process, and it is also coupled with an experimental study on the flow and thermal transport processes in the system. An impingement type reactor, with a rotating base, is considered. The dependence of the thin film growth rate and uniformity on operating conditions such as inflow velocity, rotational speed, and susceptor temperature are investigated in detail. Similarly, the effect of the geometry and configuration of the reactor are studied. The study also considers the effect of thermal and solutal buoyancy on the resulting flow. The flow and the associated transport processes are discussed in detail on the basis of the results obtained to suggest approaches to improve the uniformity of the film, minimize fluid loss and reduce flow recirculation that could affect growth rate and uniformity.

Copyright © 2013 by ASME

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