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Molecular Dynamics Simulation of Vapor Condensation on Nanotubes

[+] Author Affiliations
Donguk Suh, Kenji Yasuoka

Keio University, Yokohama, Japan

Xiao Cheng Zeng

University of Nebraska, Lincoln, NE

Paper No. MNHMT2013-22222, pp. V001T03A011; 4 pages
doi:10.1115/MNHMT2013-22222
From:
  • ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
  • ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
  • Hong Kong, China, December 11–14, 2013
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-3615-4
  • Copyright © 2013 by ASME

abstract

Vapor condensation on silicon nanotubes has been simulated by classical molecular dynamics to understand how the nucleation and condensation process for pores is affected. Two different nanotube aspect ratios were examined to see if there are growth rate changes. The rate for the two different types of nanotubes did not show significant variation meaning that the aspect ratio is an insignificant factor to enhance condensation. This result is consistent with previous nanorod studies. The supersaturated vapor gathered both inside and outside of the tube. Unlike the growth rate, however, the occurrence of homogeneous nucleation was hindered contrary to other basic geometries in previous studies.

Copyright © 2013 by ASME

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