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Effect of Hydrogen on the Mechanical Properties of Silicon Crystal Surface

[+] Author Affiliations
Hayato Izumi, Ryota Mukaiyama, Nobuyuki Shishido, Shoji Kamiya

Nagoya Institute of Technology, Nagoya, Japan

Paper No. IPACK2013-73324, pp. V001T06A008; 5 pages
doi:10.1115/IPACK2013-73324
From:
  • ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
  • Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes
  • Burlingame, California, USA, July 16–18, 2013
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 978-0-7918-5575-1
  • Copyright © 2013 by ASME

abstract

This paper reports the mechanical properties of single crystal silicon surface changed with hydrogen atoms trapped by underwater boiling treatment. Nanoindentaion test using a Berkovich indenter in six different indentation loads ranging from 100 μN to 1000 μN was conducted to obtain the load-displacement curve. The energy dissipated in plastic deformation, i.e. plasticity energy, during indentation on silicon wafers with different carrier concentration (undoped, lightly and heavily boron doped silicon) were compared. After boiling treatment, increment in the plasticity energy was observed on silicon containing boron. This result suggests that hydrogen atoms trapped inside silicon enhanced dislocation mobility leading to larger plastic deformation.

Copyright © 2013 by ASME

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