Full Content is available to subscribers

Subscribe/Learn More  >

Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density

[+] Author Affiliations
Masaaki Koganemaru

Fukuoka Industry, Science & Technology Foundation, Fukuoka, Fukuoka, Japan

Naohiro Tada, Noriyuki Miyazaki

Kyoto University, Kyoto, Japan

Toru Ikeda

Kagoshima University, Kagoshima, Japan

Paper No. IPACK2013-73248, pp. V001T05A013; 5 pages
  • ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
  • Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes
  • Burlingame, California, USA, July 16–18, 2013
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 978-0-7918-5575-1
  • Copyright © 2013 by ASME


This paper discusses a numerical model for analysing the effects of mechanical stress on semiconductor devices. In other words, drift-diffusion device simulation is conducted using a physical model incorporating the effects of mechanical stress. Then, each impact of the stress-induced physical phenomena is analysed. In our previous study, three physical phenomena that were attributed to mechanical stress have been modeled in our electron mobility model, i.e., the changes in relative population, the momentum relaxation time and the effective mass of electrons in conduction-band valleys. In addition, in this study, the stress-induced change of intrinsic carrier density is modeled. Stress-induce variations of drain current characteristics on n-type Metal Oxide Semiconductor Field Effect Transistors (nMOSFETs) are evaluated using a drift-diffusion device simulator including above mentioned physical models. It is demonstrated that the impact of stress-induced change of intrinsic carrier density is small for our evaluated nMOSFETs.

Copyright © 2013 by ASME
Topics: Density , Simulation , Stress



Interactive Graphics


Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In