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Effect of the Lattice Mismatch Between Copper Thin-Film Interconnection and Base Material on the Crystallinity of the Interconnection

[+] Author Affiliations
Chuanhong Fan, Ryosuke Furuya, Osamu Asai, Ken Suzuki, Hideo Miura

Tohoku University, Sendai, Miyagi, Japan

Paper No. IPACK2013-73147, pp. V001T05A005; 6 pages
  • ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
  • Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes
  • Burlingame, California, USA, July 16–18, 2013
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 978-0-7918-5575-1
  • Copyright © 2013 by ASME


In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

Copyright © 2013 by ASME
Topics: Thin films , Copper



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