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Numerical Study and Optimization of GaN Thin-Film Growth by MOCVD Method

[+] Author Affiliations
H. S. Fang, Y. Y. Pan, S. Liu, Z. Zhang

Huazhong University of Science and Technology, Wuhan, Hebei, China

J. A. Wei

ASM Technology Singapore Pte. Ltd., Singapore

L. L. Zheng

Tsinghua University, Beijing, China

Paper No. HT2013-17598, pp. V004T14A021; 8 pages
doi:10.1115/HT2013-17598
From:
  • ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology
  • Volume 4: Heat and Mass Transfer Under Extreme Conditions; Environmental Heat Transfer; Computational Heat Transfer; Visualization of Heat Transfer; Heat Transfer Education and Future Directions in Heat Transfer; Nuclear Energy
  • Minneapolis, Minnesota, USA, July 14–19, 2013
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-5550-8
  • Copyright © 2013 by ASME

abstract

Light-emitting diode (LED) is considered as the “green light” of the twenty-first century, and the white high-power LED is mainly achieved by the excitation of yellow fluorescent powder with GaN-based blue light. Therefore, the quality of GaN films directly influences the reliability, light efficiency and durability of the Led devices. In the paper, a coupled model has been developed and applied on the simulation of transport phenomena and chemical kinetics during the GaN growth process by a vertical metal-organic chemical vapor deposition (MOCVD) reactor. The effects of the carrier gas type, gas flow rate, and the disk rotation rate on the species distributions, GaN deposition rate and temperature field are investigated. The results indicate that nitrogen is better than hydrogen as carrier gas in consideration of the GaN deposition rate, and that, at the current range of the growth parameters, fast crystal rotation rate and gas inlet velocity are favorable for the large deposition rate and for the improvement of the averaged growth uniformity. However, the edge effect becomes more critical. The results also show that an intermediate gas inlet velocity and a fast disk rotation rate are better conditions from an averaged evaluation of the deposition rate and growth uniformity. The analyses have provided important guide for a practical GaN thin-film growth.

Copyright © 2013 by ASME

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