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To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

[+] Author Affiliations
H. S. Fang, Q. J. Zhang, S. Wang, Y. Y. Pan

Huazhong University of Science & Technology, Wuhan, Hubei, China

L. L. Zheng

Tsinghua University, Beijing, China

Paper No. IMECE2012-86653, pp. 117-124; 8 pages
doi:10.1115/IMECE2012-86653
From:
  • ASME 2012 International Mechanical Engineering Congress and Exposition
  • Volume 7: Fluids and Heat Transfer, Parts A, B, C, and D
  • Houston, Texas, USA, November 9–15, 2012
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4523-3
  • Copyright © 2012 by ASME

abstract

A global modeling is conducted to predict heat transfer, fluid flow, the shape of solid/liquid (S/L) interface, and electromagnetic field during a Radio Frequency (RF)-heated Cz-growth of sapphire single crystal process. The relationships between the convexity of the S/L interface and furnace design/growth parameters are established. Thermal stress distributions of each case are modeled, and the one with the least level of the maximum von Mises stress is proposed. Specific efforts are further made to achieve the flat S/L shape by modifying the furnace design. It is found that a flat interface is crucial for the reduction of thermal stress. Therefore, stress-related defects in sapphire single crystals grown by Czochralski (Cz) method could be optimized from the discussion.

Copyright © 2012 by ASME

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