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Utilization of Least Square Support Vector Machine (LSSVM) for Electrical Resistivity Prediction of the Zn-Mn-S Nanocrystalline Semiconductor Films

[+] Author Affiliations
Ali A. Abbasi, M. T. Ahmadian

Sharif University of Technology, Tehran, Iran

Paper No. IMECE2012-85028, pp. 1099-1104; 6 pages
doi:10.1115/IMECE2012-85028
From:
  • ASME 2012 International Mechanical Engineering Congress and Exposition
  • Volume 3: Design, Materials and Manufacturing, Parts A, B, and C
  • Houston, Texas, USA, November 9–15, 2012
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4519-6
  • Copyright © 2012 by ASME

abstract

In this investigation, application of the least square support vector machine (LSSVM) for modeling of the electrical resistivity of the magnetic Zn-Mn-S nanocrystalline semiconductor films has been described. The model has been trained based on the experimental data obtained from a published work by Sreekantha Reddy et al. The model inputs are temperature and variations in the concentrations of Zn, Mn. The results indicate that LSSVM is able to be used for accurate prediction of the electrical resistivity of the Zn-Mn-S nanocrystalline semiconductor films.

Copyright © 2012 by ASME

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