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Thermoelectric Characterization of Ge2Sb2Te5 Films for Phase-Change Memory

[+] Author Affiliations
Jaeho Lee, Takashi Kodama, Yoonjin Won, Mehdi Asheghi, Kenneth E. Goodson

Stanford University, Stanford, CA

Paper No. MNHMT2012-75092, pp. 687-693; 7 pages
doi:10.1115/MNHMT2012-75092
From:
  • ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
  • ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
  • Atlanta, Georgia, USA, March 3–6, 2012
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 978-0-7918-5477-8
  • Copyright © 2012 by ASME

abstract

While thermoelectric effects can strongly influence the performance of phase-change memory (PCM), the thermoelectric properties of phase-change materials for thin film structure have received little attention. This work reports the temperature and phase dependent Seebeck coefficient of 25 nm and 125 nm thick Ge2Sb2Te5 (GST) films. The Seebeck coefficient of crystalline GST films varies strongly with film thickness, due to changes in crystallization effect and grain boundary scattering. Electrothermal simulations demonstrate that the measured thermoelectric properties can strongly influence the temperature distribution and figures of merit for PCM devices. These data will facilitate cell optimization of novel phase-change memories.

Copyright © 2012 by ASME

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