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Optical Transmission Properties of Silicon Wafters: Theoretical Analysis

[+] Author Affiliations
J. M. Zhang, Z. J. Pei

Kansas State University

J. G. Sun

Argonne National Laboratory

Paper No. IMECE2004-59195, pp. 17-24; 8 pages
doi:10.1115/IMECE2004-59195
From:
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Nondestructive Evaluation Engineering
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Nondestructive Evaluation Engineering Division
  • ISBN: 0-7918-4716-0 | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME

abstract

As a nondestructive measurement method, laser scattering has been preliminarily applied to detect subsurface damage in silicon wafers, but the quantitative correlation between scatter images and subsurface damage depth has not been established yet. In order to assess subsurface damage depth in silicon wafers, a systematic study has been carried out. In the authors’ another paper, a detailed experimental investigation on optical transmission percentage of silicon wafers was presented. As a follow up, this paper will describe a method to calculate the “skin depth” of silicon wafers from the experimental data of optical transmission percentage. And also, how to apply this “skin depth” on assessment of subsurface damage depth will be discussed.

Copyright © 2004 by ASME

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