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SCREAM’03: A Single Mask Process for High-Q Single Crystal Silicon MEMS

[+] Author Affiliations
Wenhua Zhang, Weibin Zhang, Kimberly Turner

University of California at Santa Barbara

Peter G. Hartwell

Hewlett Packard Laboratories

Paper No. IMECE2004-61140, pp. 211-215; 5 pages
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Microelectromechanical Systems Division
  • ISBN: 0-7918-4714-4 | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME


We present a single-mask single-crystal silicon (SCS) process for the fabrication of suspended MicroElectroMechanical devices (MEMS). This is a bulk micro-machining process that uses Deep Reactive Ion Etch (DeepRIE) of a silicon-on-insulator (SOI) substrate with highly doped device layer to fabricate movable single-crystal silicon MEMS structures, which can be electrically actuated without metal deposition. The buried oxide layer is not removed afterwards and no wet process release is involved in the whole process sequence, which makes this process different from others works based on SOI wafer. Several MEMS oscillators have been made using this process. Dynamic behavior is characterized using a laser vibrometer. Quality factor is improved by more than 1 order compared to the same oscillator made using SCREAM process.

Copyright © 2004 by ASME



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