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Activation Energy Measurement in Thin Gold Film by MEMS-Based Tensile Testing Device

[+] Author Affiliations
Jong H. Han, Taher M. Saif

University of Illinois at Urbana-Champaign

Paper No. IMECE2004-61385, pp. 187-190; 4 pages
doi:10.1115/IMECE2004-61385
From:
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Materials
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Materials Division
  • ISBN: 0-7918-4712-8 | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME

abstract

In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.

Copyright © 2004 by ASME

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