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Optical Properties of InAs/GaAs Quantum Dots Grown by Epitaxy

[+] Author Affiliations
M. K. Kuo, T. R. Lin, B. T. Liao, C. H. Yu

National Taiwan University

Paper No. IMECE2004-59941, pp. 549-554; 6 pages
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4707-1 | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME


Strain effects on optical properties of self-assembled InAs/GaAs quantum dots grown by epitaxy are investigated. A new model based on the theory of linear elasticity is developed to analyze three-dimensional induced strain field. The model takes sequence of fabrication process of quantum-dot into account, where the mismatch of lattice constants between wetting layer and substrate is treated as initial strain first for the heterostructure system without capping material. The obtained total strain field is then treated as initial strain again for the whole heterostructure system with capping material. The computed strain from these two-steps analysis is then used as an input for the electronic band structure calculation. The numerical results show that strain field from this new model has significant difference from the usual model where the sequence of fabrication process is omitted. The strain-induced potential is incorporated into the three-dimensional steady state effective mass Schrödinger equation with the aid of the Pikus-Bir Hamiltonian and Luttinger-Kohn formalism. Both the strain field and the solutions of the steady state Schrödinger equations are found numerically by using of a commercial finite element package. The energy levels as well as the wave functions of both conduction and valence bands of quantum dots are calculated. Finally, energy of interband optical transitions is obtained in numerical experiments.

Copyright © 2004 by ASME



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