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Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

[+] Author Affiliations
Ronald Hon, Shawn X. D. Zhang, S. W. Ricky Lee

Hong Kong University of Science and Technology

Paper No. IMECE2004-62322, pp. 243-248; 6 pages
doi:10.1115/IMECE2004-62322
From:
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4707-1 | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME

abstract

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and time needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.

Copyright © 2004 by ASME
Topics: Lasers , Drilling , Etching , Silicon

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