0

Full Content is available to subscribers

Subscribe/Learn More  >

Simulation of Nano-Scale Multi-Fingered PD/SOI MOSFETs Using the Boltzmann Transport Equation

[+] Author Affiliations
José A. Pascual-Gutiérrez, Jayathi Y. Murthy, Raymond Viskanta

Purdue University, West Lafayette, IN

Rajiv V. Joshi, Ching-Te K. Chuang

IBM T. J. Watson Research Center, Yorktown Heights, NY

Paper No. HT-FED2004-56375, pp. 387-398; 12 pages
doi:10.1115/HT-FED2004-56375
From:
  • ASME 2004 Heat Transfer/Fluids Engineering Summer Conference
  • Volume 4
  • Charlotte, North Carolina, USA, July 11–15, 2004
  • Conference Sponsors: Heat Transfer Division and Fluids Engineering Division
  • ISBN: 0-7918-4693-8 | eISBN: 0-7918-3740-8
  • Copyright © 2004 by ASME

abstract

This work uses a gray, a semi-gray, and a non-gray model based on the Boltzmann Transport Equation (BTE) in the relaxation time approximation to compute the temperature distribution in a nano-scale multi-finger, PD/SOI nMOSFET with copper interconnects. The BTE models were successfully incorporated in CFD software, Fluent 6.1. The BTE is used in the device layer, whereas in other regions of the device, such as the silicon substrate, buried oxide, gate oxide, poly-gate, and metal interconnects, the Fourier heat conduction equation is employed. The BTE is coupled with the heat conduction equation at the interfaces using the diffuse mismatch model (DMM). Heat dissipation in the channel region of the FET and in the metal lines of the device is specified based on circuit simulations for a clock buffer used in a microprocessor. The computed results for the temperature distribution in the multi-finger NFET using the different approaches are compared with simulations that employ the classical heat conduction equation in the entire domain. The comparisons demonstrate that the broad temperature fields in the transistor are primarily determined by the overall thermal resistances due to the various device structures; channel temperature, however, is determined in large part by sub-continuum effects. The need for direct measurements of channel temperature rather indirect gate temperature measurements is pointed out as well.

Copyright © 2004 by ASME

Figures

Tables

Interactive Graphics

Video

Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In