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Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth

[+] Author Affiliations
Shigeki Hirasawa

Hitachi, Ltd.

Hiroyuki Ishibashi, Kazuhisa Kurashige, Akihiro Gunji

Hitachi Chemical Company, Ltd.

Paper No. IMECE2004-59134, pp. 347-352; 6 pages
doi:10.1115/IMECE2004-59134
From:
  • ASME 2004 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Volume 3
  • Anaheim, California, USA, November 13 – 19, 2004
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4711-X | eISBN: 0-7918-4178-2, 0-7918-4179-0, 0-7918-4180-4
  • Copyright © 2004 by ASME

abstract

Temperature distributions and thermal stress distributions in a semi-transparent GSO crystal during Czochralski (CZ) single crystal growth were numerically investigated by thermal radiation heat transfer analysis and anisotropy stress analysis. As GSO has special optical properties, such as semi-transparency at a wavelength shorter than 4.5 μm, thermal radiation heat transfer was calculated by the Monte Carlo method. These calculations showed that thermal stress is caused by the radial temperature distribution on the outside of the upper part of the crystal. To reduce this temperature distribution, the following three manufacturing conditions were found to be effective: use a sharp taper angle of the crystal, install a lid to the top of the insulator, and install a ring around the tapered part of the crystal.

Copyright © 2004 by ASME

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