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Computer Simulation of Laser Annealing of a Nanostructured Surface

[+] Author Affiliations
Denis Ivanov, Ilya Marinov

St. Petersburg State University, St. Petersburg, Russia

Yuriy Gorbachev, Alexander Smirnov

St. Petersburg Polytechnic University, St. Petersburg, Russia

Valeria Krzhizhanovskaya

University of Amsterdam, Amsterdam, The Netherlands

Paper No. DETC2009-87087, pp. 1197-1198; 2 pages
  • ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
  • Volume 2: 29th Computers and Information in Engineering Conference, Parts A and B
  • San Diego, California, USA, August 30–September 2, 2009
  • Conference Sponsors: Design Engineering Division and Computers in Engineering Division
  • ISBN: 978-0-7918-4899-9 | eISBN: 978-0-7918-3856-3
  • Copyright © 2009 by ASME


Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal–oxide–semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].

Copyright © 2009 by ASME



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