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Investigation on the Effect of Storage Time on Bond Strength Between Plasma Activated Silicon Wafers

[+] Author Affiliations
Joel Soman, Chad B. O’Neal

Louisiana Tech University, Ruston, LA

Paper No. IMECE2009-13110, pp. 23-28; 6 pages
doi:10.1115/IMECE2009-13110
From:
  • ASME 2009 International Mechanical Engineering Congress and Exposition
  • Volume 14: Processing and Engineering Applications of Novel Materials
  • Lake Buena Vista, Florida, USA, November 13–19, 2009
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4387-1 | eISBN: 978-0-7918-3863-1
  • Copyright © 2009 by ASME

abstract

This paper investigates the effect of storage time on the bond strength of plasma-activated silicon (Si) wafers. Plasma activation was carried out in a reactive ion etch chamber using O2 gas. The activated wafers were stored in a clean room environment for specific time intervals before pre-bonding them (in a high vacuum environment) using a substrate bonder. Steps involved in wet chemical activation and pre-bonding of the wafers were discussed in detail. The pre-bonded wafers were thermally annealed. The bond quality, in addition to the bond strength, of in-situ and ex-situ thermal annealed wafer pairs were evaluated. The bond quality was determined using near-infrared imagery, and tensile tests were conducted on dies diced out from the bonded pair. The chemistry involved during activation, storage, pre-bonding, and thermal annealing was investigated thoroughly. The bond quality and bond strengths of wafers for corresponding storage times were compared using the near-infrared imagery and tensile tests respectively. Finally interesting phenomenon, like the increase in bond strength after a particular storage time, was studied and explained.

Copyright © 2009 by ASME

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