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The Measurement of Overall Elastic Stiffness and Bulk Modulus in Anisotropic Materials: Semiconductors

[+] Author Affiliations
Mohamed S. Gaith, I. Alhayek

Al-Balqaa Applied University, Amman, Jordan

Paper No. IMECE2009-10097, pp. 29-34; 6 pages
  • ASME 2009 International Mechanical Engineering Congress and Exposition
  • Volume 6: Emerging Technologies: Alternative Energy Systems; Energy Systems: Analysis, Thermodynamics and Sustainability
  • Lake Buena Vista, Florida, USA, November 13–19, 2009
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4379-6 | eISBN: 978-0-7918-3863-1
  • Copyright © 2009 by ASME


In this study, the correlation between macroscopic and microscopic properties of the II-IV semiconductor compounds ZnX (X = S, Se, Te) is investigated. Based on constructing orthonormal tensor basis elements using the form-invariant expressions, the elastic stiffness for cubic system materials is decomposed into two parts; isotropic (two terms) and anisotropic parts. A scale for measuring the overall elastic stiffness of these compounds is introduced and its correlation with the calculated bulk modulus and lattice constants is analyzed. The overall elastic stiffness is calculated and found to be directly proportional to bulk modulus and inversely proportional to lattice constants. A scale quantitative comparison of the contribution of the anisotropy to the elastic stiffness and to measure the degree of anisotropy in an anisotropic material is proposed using the Norm Ratio Criteria (NRC). It is found that ZnS is the nearest to isotropy (or least anisotropic) while ZnTe is the least isotropic (or nearest to anisotropic) among these compounds. The norm and norm ratios are found to be very useful for selecting suitable materials for electro-optic devices, transducers, modulators, acousto-optic devices.

Copyright © 2009 by ASME



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