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Effects of Silicon Substrate on the Growth of Carbon Nanotubes

[+] Author Affiliations
K. P. Yung, J. Wei

Singapore Institute of Manufacturing Technology, Singapore

R. Y. J. Tay, B. K. Tay

Nanyang Technological University, Singapore

Paper No. IMECE2009-10553, pp. 143-148; 6 pages
doi:10.1115/IMECE2009-10553
From:
  • ASME 2009 International Mechanical Engineering Congress and Exposition
  • Volume 5: Electronics and Photonics
  • Lake Buena Vista, Florida, USA, November 13–19, 2009
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4378-9 | eISBN: 978-0-7918-3863-1
  • Copyright © 2009 by ASME

abstract

Due to their extraordinary electrical, thermal and mechanical properties, carbon nanotubes (CNTs) have been foreseen as potential materials for electronics devices in the future. To integrate CNTs in electronic applications, CNTs would need to be deposited on different types of Si substrate. In this study, CNTs were grown on Ni catalyst layer with four types of substrates, namely Si, n++ Si, p++ Si and SiO2 , using Plasma Enhanced Chemical Vapor Deposition (PECVD). The morphology and microstructure of the CNT films were analyzed by scanning electron microscopy (SEM) and Raman spectroscope. It was found that the type of Si substrate has significant effects on CNT growing characteristics. The possible mechanisms for the observed results are proposed. These findings add significant reference value to select deposition conditions suitable for deposition of CNTs on different types of Si substrate.

Copyright © 2009 by ASME

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