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Characterization of VO2-Coated SiO2 Micromechanical Bridges Heated by Light Radiation

[+] Author Affiliations
Emmanuelle Merced, Rafmag Cabrera, Noraica Dávila, Nelson Sepúlveda

Michigan State University, East Lansing, MI

Félix E. Fernández

University of Puerto Rico at Mayagüez, Mayagüez, Puerto Rico

Paper No. SMASIS2011-4963, pp. 45-48; 4 pages
  • ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems
  • ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, Volume 1
  • Scottsdale, Arizona, USA, September 18–21, 2011
  • ISBN: 978-0-7918-5471-6
  • Copyright © 2011 by ASME


This letter reports the resistivity variations for a VO2 thin film on silicon dioxide (SiO2 ) micromechanical bridges when the coating’s insulator-to-metal transition (IMT) is thermally induced by optical radiation with a 635 nm laser diode or by conduction using a heater. The coating’s resistivity and temperature coefficient of resistance (TCR) were calculated as a function of temperature through heating-cooling cycles. A resistivity change of nearly three orders of magnitude through the IMT was observed, and the results obtained for the two different heating methods were compared. A peak TCR of −85%/°C during the heating process and −80.8%/°C during cooling were measured.

Copyright © 2011 by ASME



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