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Direct Wire-Bonding to Silicon Devices Without the Use of Metallic Layers

[+] Author Affiliations
Arnon Hirshberg, David Elata

Technion-Israel Institute of Technology, Haifa, Israel

Paper No. ESDA2008-59151, pp. 303-306; 4 pages
doi:10.1115/ESDA2008-59151
From:
  • ASME 2008 9th Biennial Conference on Engineering Systems Design and Analysis
  • Volume 4: Fatigue and Fracture; Fluids Engineering; Heat Transfer; Mechatronics; Micro and Nano Technology; Optical Engineering; Robotics; Systems Engineering; Industrial Applications
  • Haifa, Israel, July 7–9, 2008
  • Conference Sponsors: International
  • ISBN: 978-0-7918-4838-8 | eISBN: 0-7918-3827-7
  • Copyright © 2008 by ASME

abstract

We present a novel method of direct wire-bonding of Silicon MEMS devices that does not require any metal bond-pads. We demonstrate that the strength and the conductivity of direct wire-bonds are comparable with those of standard bonds on metal bond-pads. Direct wire-bonding eliminates the metallization step, thus alleviating the constraint of consecutive high-temperature micromachining processes.

Copyright © 2008 by ASME
Topics: Silicon , Wire bonding

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