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Thermal Resistance of Silicon/Germanium Interfaces From Lattice Dynamics Calculations

[+] Author Affiliations
E. S. Landry, A. J. H. McGaughey

Carnegie Mellon University, Pittsburgh, PA

Paper No. HT2009-88025, pp. 29-32; 4 pages
  • ASME 2009 Heat Transfer Summer Conference collocated with the InterPACK09 and 3rd Energy Sustainability Conferences
  • Volume 2: Theory and Fundamental Research; Aerospace Heat Transfer; Gas Turbine Heat Transfer; Computational Heat Transfer
  • San Francisco, California, USA, July 19–23, 2009
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-4357-4 | eISBN: 978-0-7918-3851-8
  • Copyright © 2009 by ASME


Phonon scattering at the interface between two materials results in a thermal resistance, R [1]. An ability to accurately predict the thermal resistance of semiconductor interfaces is important in devices where phonon interface scattering is a significant contributor to the overall thermal resistance (e.g., computer chips with high component density). This ability will also lead to improvements in the design of semiconductor superlattices with low thermal conductivity, desirable in thermoelectric energy conversion applications [2].

Copyright © 2009 by ASME



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