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Post-CMP Cleaning Applications

[+] Author Affiliations
V. Khosla, M. Vinogradov, N. V. Gitis

Center for Tribology, Inc., Campbell, CA

R. K. Singh, D. W. Stockbower, C. R. Wargo

Entegris, Inc., Campbell, CA

Paper No. IJTC2008-71017, pp. 719-720; 2 pages
doi:10.1115/IJTC2008-71017
From:
  • STLE/ASME 2008 International Joint Tribology Conference
  • STLE/ASME 2008 International Joint Tribology Conference
  • Miami, Florida, USA, October 20–22, 2008
  • Conference Sponsors: Tribology Division
  • ISBN: 0-7918-4336-9 | eISBN: 978-0-7918-3837-2

abstract

CMP process yield depends on effectiveness of a post-CMP cleaning, which should reduce roughness of the polished wafer and leave it defect-free, consistently removing particles, organic residues, and ionic contamination. This paper presents an overview of wafer cleaning attributes, challenges and opportunities. The cleaning effectiveness depends on the stability of brush PVA (Poly Vinyl Alcohol) properties, magnitude of brush-wafer frictional force, and the adhesion forces between the particle and wafer, and the particle and brush.

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