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Low Temperature, All-Inorganic Nanoparticle Solution Process for ZnO Nanowire Network Transistor Fabrication on a Polymer Substrate

[+] Author Affiliations
Seung Hwan Ko

University of California at Berkeley, Berkeley, CA; KAIST, Deajeon, Republic of Korea

Inkyu Park

KAIST, Deajeon, Republic of Korea

Heng Pan, Nipun Misra, Costas P. Grigoropoulos

University of California at Berkeley, Berkeley, CA

Paper No. HT2009-88062, pp. 771-775; 5 pages
doi:10.1115/HT2009-88062
From:
  • ASME 2009 Heat Transfer Summer Conference collocated with the InterPACK09 and 3rd Energy Sustainability Conferences
  • Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Heat Transfer Equipment; Heat Transfer in Electronic Equipment
  • San Francisco, California, USA, July 19–23, 2009
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 978-0-7918-4356-7 | eISBN: 978-0-7918-3851-8
  • Copyright © 2009 by ASME

abstract

All-solution processed, low-temperature zinc oxide nanowire network transistor fabrication was demonstrated by combining 1) source-drain electrode fabrication by direct nanoimprinting of metal nanoparticle solution and 2) zinc oxide nanowire network based channel synthesized by a simple hydrothermal approach in water. This simple process can produce high resolution metal contact transistors with inorganic semiconductor nanowire active material in a fully maskless sequence, eliminating the need for lithographic and vacuum processes. The temperature throughout the processing was under 140°C, which will enable further applications to electronics on low-cost, large-area flexible polymer substrates.

Copyright © 2009 by ASME

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