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Effect of Compressive Loading on the Interconnect Reliability Under Thermal Cycling

[+] Author Affiliations
Da Yu, Tung Nguyen, Ho H. Lee, S. B. Park

State University of New York at Binghamton, Binghamton, NY

Namseo Goo

Konkuk University, Seoul, Korea

Paper No. IPACK2011-52232, pp. 603-608; 6 pages
doi:10.1115/IPACK2011-52232
From:
  • ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems
  • ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems, MEMS and NEMS: Volume 1
  • Portland, Oregon, USA, July 6–8, 2011
  • ISBN: 978-0-7918-4461-8
  • Copyright © 2011 by ASME

abstract

The ever increasing power density in modern semiconductor devices requires heat dissipation solution such as heat sink to remove the heat away from the device. A compressive loading was applied to reduce the interfacial thermal resistance between package and heat sink. In this study both numerical modeling and experimental approaches were employed to study the effect of compressive loading on the interconnect reliability, especially for high power density package, under thermal cycling loading conditions. The JEDEC standard thermal cycle tests were conducted and the resistance of the daisy chained circuits was in-situ measured to record the failure time. The failure analysis has been performed to indentify the failure modes of solder joint with and without the presence of compressive loading. A finite element based thermal fatigue life prediction model for SAC305 solder joint under compressive loading was also developed and validated with the experimental results.

Copyright © 2011 by ASME
Topics: Reliability

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