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Surface-Plasmon Enhanced Near-Bandgap Light Absorption in Silicon Photovoltaics

[+] Author Affiliations
Lu Hu, Xiaoyuan Chen, Gang Chen

Massachusetts Institute of Technology, Cambridge, MA

Paper No. ENIC2008-53056, pp. 11-12; 2 pages
doi:10.1115/ENIC2008-53056
From:
  • ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences
  • ASME 2008 3rd Energy Nanotechnology International Conference
  • Jacksonville, Florida, USA, August 10–14, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4323-9 | eISBN: 0-7918-3832-3
  • Copyright © 2008 by ASME

abstract

One key challenge for silicon-based solar cells is the weak absorption of long-wavelength photons near the bandgap (1.1eV) due to the indirect bandgap of silicon. A large fraction of the AM 1.5 solar spectrum falls into a regime (0.7 μm – 1.1 μm) where silicon does not absorb light well. The capture of these long-wavelength photons imposes a particular problem to the thin-film silicon solar cells. For this reason, thin-film silicon solar cells often incorporate some forms of light trapping mechanisms.

Copyright © 2008 by ASME

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