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Study of Low-Temperature Wafer Bonding With Au-Au Bonding Technique

[+] Author Affiliations
H. Kurotaki, H. Kobayashi

EV Group Japan K.K., Yokohama, Kanagawa, Japan

H. Shinohara, J. Mizuno, S. Shoji

Waseda University, Tokyo, Japan

Paper No. MicroNano2008-70064, pp. 765-766; 2 pages
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME


In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

Copyright © 2008 by ASME



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