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Fabrication of SiC MEMS Pressure Sensor by Anodic Bonding

[+] Author Affiliations
Wei Tang, Zhe Chen, Dayu Tian, Haixia Zhang

Peking University, Beijing, China

Paper No. MicroNano2008-70138, pp. 627-630; 4 pages
doi:10.1115/MicroNano2008-70138
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

Due to its outstanding chemical stability and mechanical properties, silicon carbide (SiC) is one of the best materials for harsh environment applications. In this work, bulk micromachining technique was utilized to fabricate a PECVD SiC pressure sensor. This technique simplified the process and solved the stickiness problem in surface micromachining. The whole fabrication temperature is under 450°C, which makes it compatible with the CMOS process.

Copyright © 2008 by ASME

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