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Fabrication of SiC MEMS Pressure Sensor Based on Novel Vacuum-Sealed Method

[+] Author Affiliations
Chao Wang, Xiaobao Geng, Haixia Zhang

Peking University, Beijing, China

Paper No. MicroNano2008-70136, pp. 623-626; 4 pages
doi:10.1115/MicroNano2008-70136
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

Fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide acts as sacrificial layer which solve stiction problem in process. STS PECVD system is utilized to realize releasing, deposition and vacuum sealing consecutively in the process chamber, by this method wafer cleaning step was avoided before releasing the sacrificial layer, therefore, stiction problem is prevented. This fabrication technology can achieve high yield and low cost.

Copyright © 2008 by ASME

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