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Deep Trench Refilling With Parylene C for High-Quality Isolation in Bulk Micromachined Devices

[+] Author Affiliations
Yinhua Lei, Wei Wang, Huaiqiang Yu, Ting Li, Yufeng Jin, Haixia Zhang, Zhihong Li

Peking University, Beijing, China

Paper No. MicroNano2008-70112, pp. 601-604; 4 pages
doi:10.1115/MicroNano2008-70112
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

Isolation is usually a key factor that requires serious considerations in developing an integrated MEMS device. Here a deep trench refilling technology with parylene C was proposed to get high-quality isolation performance in bulk micro-machined devices. A 7μm wide and 50μm deep trench was etched on silicon and then refilled with parylene C to work as the functional component. A multi-step etching-refilling process was tested to improve the refilling performance. Based on primary experimental results, the trench was nearly filled by parylene C with a keyhole width less than 1.0μm. Combined with a backside slicing/etching process, the suspended trench exhibited an excellent mechanical connection performance with a breaking strength larger than 200 kPa. The present parylene C refilling technique could be a promising choice for both electrical and thermal isolation in bulk micromachined silicon devices.

Copyright © 2008 by ASME
Topics: Micromachining

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