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Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques

[+] Author Affiliations
Jianan Lv, Zhenchuan Yang

Peking University, Beijing, China

Kevin J. Chen

Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

Paper No. MicroNano2008-70037, pp. 573-577; 5 pages
doi:10.1115/MicroNano2008-70037
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

A method for fabricating gallium nitride (GaN) based microelectromechanical (MEM) devices on silicon substrate was demonstrated. Various suspended GaN microstructures have been fabricated using ICP (Inductive coupled plasma)-based sacrificial etching of the underlying silicon with combination of both anisotropic and isotropic etching techniques, so that deeply released freestanding microstructures with minimized lateral undercut can be achieved. Cl2 -based ICP-RIE (Reactive ion etching) dry etching technique is employed to pattern gallium nitride. The experimental results show that freestanding GaN microstructures with large air gap of high depth-to-width ratio can be realized by employing such two-step dry releasing technique. Fabrication results have been characterized by scanning electron microscope (SEM).

Copyright © 2008 by ASME

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