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Study for the Interface Thermal Resistance of Metal-Dielectric Layers

[+] Author Affiliations
Heng-Chieh Chien

Industrial Technology Research Institute; National Tsing Hua University, Hsinchu, Taiwan

Da-Jen Yao, Cheng-Ting Hsu

National Tsing Hua University, Hsinchu, Taiwan

Paper No. MicroNano2008-70280, pp. 423-427; 5 pages
doi:10.1115/MicroNano2008-70280
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

In this Study, we measured the interface thermal resistance between metal/dielectric layers using a sandwiched structure. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two PECVD SiO2 layers. Measured values of the interface thermal resistance distributed over the range of 2.5∼3.8×10−8 m2 K/W. The continuum two-fluid model was served to provide some reasonable physical insight into the cause of metal/dielectric interface thermal resistance, and also to verify our measurement data. The estimated values are much smaller than the measured values. Moreover, the adhesion tests were implemented to verify the interrelation between the interface adhesion force and the measured interface thermal resistance. The results show the interface thermal resistance is very insensitivity to the adhesion force.

Copyright © 2008 by ASME

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