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Relaxor Properties and Conduction in TlInS2 Crystals

[+] Author Affiliations
Rauf Sardarly, Oktay Samedov, Arzu Nadzhafov, Famin Salmanov, Adil Abdullayev, Azad Bayramov

National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

Paper No. MicroNano2008-70329, pp. 271-275; 5 pages
doi:10.1115/MicroNano2008-70329
From:
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
  • Clear Water Bay, Kowloon, Hong Kong, June 3–5, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4294-0 | eISBN: 0-7918-3819-6
  • Copyright © 2008 by ASME

abstract

The density of states at the energy levels associated with radiation-induced defects, the localization length of a defect center, and the hopping distance of charge carriers are determined in a TlInS2 crystal. It is demonstrated that, by varying the dose of gamma radiation, it is possible to control the dielectric properties of ferroelectrics and to attain a stable relaxor state. In the temperature range of existence of this state, charge carriers execute tunneling from electron levels in the band gap through potential barriers created by an incommensurate superstructure of the TlInS2 crystal. The considerable interest expressed by researchers in this class of ferroelectrics stems from the fact that these materials are very promising for use in data-storage systems. It will allow creating the processor on the uniform semi-conductor chip with the device for electronic reading and recording of the information from magnetic materials.

Copyright © 2008 by ASME

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