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Monte Carlo Simulation of Heat Pulse Propagation in Silicon Nanostructure

[+] Author Affiliations
David Lacroix, Gilles Parent, Sebastien Fumeron

Nancy Université, VandŒuvre les Nancy, France

Karl Joulain

LET ENSMA, Futuroscope Chasseneuil, France

Paper No. MNHT2008-52101, pp. 339-346; 8 pages
doi:10.1115/MNHT2008-52101
From:
  • ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer
  • ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer, Parts A and B
  • Tainan, Taiwan, June 6–9, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4292-4 | eISBN: 0-7918-3813-7
  • Copyright © 2008 by ASME

abstract

Heat transport in nanostructured material is a critical issue in the design of electronic devices. According to the size and the temperature, thermal properties of the considered medium can change. In order to appraise these modifications new simulation techniques based on phonon transport equation solution have been developed. In this field, the Monte Carlo method dedicated to phonon motion and collision modeling has prove to be efficient. In the present paper we propose a modified form of this method that takes into account short pulse heating in order to assess specific heat c and thermal conductivity k. The parameter assessment has been done using Laplace analysis of the Monte Carlo calculated temperature profiles at short and long times through asymptotic solutions fitting. These numerical tools have demonstrated to be efficient as c and k values obtained for bulk silicon at low and room temperatures confirmed it.

Copyright © 2008 by ASME
Topics: Heat , Simulation , Silicon

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